Proton-induced disorder in InP-based resonant tunneling diodes
Identifieur interne : 013D84 ( Main/Repository ); précédent : 013D83; suivant : 013D85Proton-induced disorder in InP-based resonant tunneling diodes
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Abstract
We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×1014 H+/cm2. Proton fluences below about 1×1013 cm-2 have little effect on the resonant tunneling diode but higher fluences decrease the peak current and increase the valley current. We find that proton-induced changes in the operating parameters are qualitatively similar to the effects of doping the wells. © 1999 American Institute of Physics.
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Jackson</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, 1401 McCormick Avenue, Largo</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Naval Research Laboratory, Code 6615, 4555 Overlook Avenue SW, Washington, DC 20375-5345</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">District de Columbia</region></placeName><wicri:cityArea>Naval Research Laboratory, Code 6615, 4555 Overlook Avenue SW, Washington</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Raytheon Systems Company, Applied Research Laboratory, P.O. Box 660246 MS 35, Dallas, Texas 75265</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Raytheon Systems Company, Applied Research Laboratory, P.O. Box 660246 MS 35, Dallas</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Rockwell International Corporation, Science Center, Thousand Oaks, California 91360</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Rockwell International Corporation, Science Center, Thousand Oaks</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="05"><s1>TriQuint Semiconductor, Hillsboro, Oregon 97124</s1></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Oregon</region></placeName><wicri:cityArea>TriQuint Semiconductor, Hillsboro</wicri:cityArea></affiliation></author><author><name sortKey="Weaver, B D" uniqKey="Weaver B">B. D. Weaver</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, 1401 McCormick Avenue, Largo</wicri:cityArea></affiliation></author><author><name sortKey="Seabaugh, A C" uniqKey="Seabaugh A">A. C. Seabaugh</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, 1401 McCormick Avenue, Largo</wicri:cityArea></affiliation></author><author><name sortKey="Van Der Wagt, J P A" uniqKey="Van Der Wagt J">J. P. A. Van Der Wagt</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, 1401 McCormick Avenue, Largo</wicri:cityArea></affiliation></author><author><name sortKey="Beam, E A" uniqKey="Beam E">E. A. Beam</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Maryland</region></placeName><wicri:cityArea>SFA, 1401 McCormick Avenue, Largo</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0303867</idno><date when="1999-07-12">1999-07-12</date><idno type="stanalyst">PASCAL 99-0303867 AIP</idno><idno type="RBID">Pascal:99-0303867</idno><idno type="wicri:Area/Main/Corpus">014D88</idno><idno type="wicri:Area/Main/Repository">013D84</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term><term>Current density</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Proton effects</term><term>Resonant tunneling diodes</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8530K</term><term>6180J</term><term>6182F</term><term>7361E</term><term>Etude expérimentale</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Diode effet tunnel résonnant</term><term>Réseau(arrangement)</term><term>Effet proton</term><term>Densité courant</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×10<sup>14</sup> H<sup>+</sup>/cm<sup>2</sup>. Proton fluences below about 1×10<sup>13</sup> cm<sup>-2</sup> have little effect on the resonant tunneling diode but higher fluences decrease the peak current and increase the valley current. We find that proton-induced changes in the operating parameters are qualitatively similar to the effects of doping the wells. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>75</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Proton-induced disorder in InP-based resonant tunneling diodes</s1></fA08><fA11 i1="01" i2="1"><s1>JACKSON (E. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>WEAVER (B. D.)</s1></fA11><fA11 i1="03" i2="1"><s1>SEABAUGH (A. C.)</s1></fA11><fA11 i1="04" i2="1"><s1>VAN DER WAGT (J. P. A.)</s1></fA11><fA11 i1="05" i2="1"><s1>BEAM (E. A.)</s1></fA11><fA14 i1="01"><s1>SFA, 1401 McCormick Avenue, Largo, Maryland 20774</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="02"><s1>Naval Research Laboratory, Code 6615, 4555 Overlook Avenue SW, Washington, DC 20375-5345</s1></fA14><fA14 i1="03"><s1>Raytheon Systems Company, Applied Research Laboratory, P.O. Box 660246 MS 35, Dallas, Texas 75265</s1></fA14><fA14 i1="04"><s1>Rockwell International Corporation, Science Center, Thousand Oaks, California 91360</s1></fA14><fA14 i1="05"><s1>TriQuint Semiconductor, Hillsboro, Oregon 97124</s1></fA14><fA20><s1>280-282</s1></fA20><fA21><s1>1999-07-12</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0303867</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We have fabricated arrays of resonant tunneling diodes based on InP substrates for exposure at room temperature with fluences of 3 MeV protons up to 7×10<sup>14</sup> H<sup>+</sup>/cm<sup>2</sup>. Proton fluences below about 1×10<sup>13</sup> cm<sup>-2</sup> have little effect on the resonant tunneling diode but higher fluences decrease the peak current and increase the valley current. 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